 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MCT6H / MCT62H Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel Features * * * * Current Transfer Ratio (CTR) of typical 100 % Isolation test voltage VISO = 5000 VRMS Low temperature coefficient of CTR Low coupling capacitance of typical 0.3 pF 8 7 6 5 C 1 2 3 4 17202_1 e3 Pb Pb-free * Wide ambient temperature range * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe, providing a fixed distance between input and output for highest safety requirements. Agency Approvals * UL1577, File No. E76222 System Code U, Double Protection Order Information Applications Galvanically separated circuits Non-interacting switches MCT6H MCT62H Part Remarks CTR > 50 %, DIP-8 CTR > 100 %, DIP-8 For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature tp 10 s Test condition Symbol VR IF IFSM Pdiss Tj Value 6 60 1.5 100 125 Unit V mA A mW C Output Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature tp/T = 0.5, tp 10 ms Test condition Symbol VCEO VECO IC ICM Pdiss Tj Value 70 7 50 100 150 125 Unit V V mA mA mW C Document Number 83525 Rev. 1.4, 26-Oct-04 www.vishay.com 1 MCT6H / MCT62H Vishay Semiconductors Coupler Parameter AC isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature 1) Test condition t = 1 min Symbol VISO Ptot Tamb Tstg 1) Value 5000 250 - 40 to + 100 - 55 to + 125 260 Unit VRMS mW C C C 2 mm from case, t 10 s Tsld Related to standard climate 23/50 DIN 50014 Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Test condition IF = 50 mA Symbol VF Min Typ. 1.25 Max 1.6 Unit V Output Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test condition IC = 1 mA IE = 100 A VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min 70 7 100 Typ. Max Unit V V nA Coupler Parameter DC isolation test voltage Isolation resistance Collector emitter saturation voltage Cut-off frequency Coupling capacitance 1) Test condition t=2s VIO = 1000 V, 40 % relative humidity IF = 10 mA, IC = 1 mA IF = 10 mA, VCE = 5 V, RL = 100 f = 1 MHz Symbol VISO1) RIO 1) VCEsat fC Ck Min 5000 Typ. Max Unit VRMS 1012 0.3 100 0.3 V kHz pF Related to standard climate 23/50 DIN 50014 Current Transfer Ratio Parameter IC/IF Test condition VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 5 mA Part MCT6H MCT6H MCT62H Symbol CTR CTR CTR Min 50 60 100 Typ. 100 120 200 Max Unit % % % www.vishay.com 2 Document Number 83525 Rev. 1.4, 26-Oct-04 MCT6H / MCT62H Vishay Semiconductors Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Test condition VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) Symbol td tr tf ts ton toff Min Typ. 3.0 3.0 4.7 0.3 6.0 5.0 Max Unit s s s s s s IF 0 IF IF +5V IC = 2 mA; adjusted through input amplitude 96 11698 0 IC 100% 90% tp t RG = 50 W tp = 0.01 T tp = 50 s Channel I Channel II 50 W 100 W Oscilloscope RL = 1 MW CL = 20 pF 10% 0 tr td ton pulse duration delay time rise time turn-on time ts tf toff t storage time fall time turn-off time 95 10804 tp td tr ton (= td + tr) ts tf toff (= ts + tf) Figure 1. Test circuit, non-saturated operation Figure 2. Switching Times Typical Characteristics (Tamb = 25 C unless otherwise specified) 300 P tot -Total Power Dissipation ( mW) 1000 Coupled device I F - Forward Current ( mA ) 250 200 Phototransistor 100 150 IR-diode 100 50 0 0 40 80 120 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 96 1 1700 Tamb - Ambient T emperature( C ) V F - Forward Voltage ( V ) Figure 3. Total Power Dissipation vs. Ambient Temperature Figure 4. Forward Current vs. Forward Voltage Document Number 83525 Rev. 1.4, 26-Oct-04 www.vishay.com 3 MCT6H / MCT62H Vishay Semiconductors CTR rel - Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 IC - Collector Current ( mA ) 100.0 V CE=5V I F=5mA IF=50mA 20mA 10.0 10mA 5mA 1.0 2mA 1mA 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 96 11927 Tamb - Ambient Temperature (C ) 0.1 0.1 96 11930 1.0 10.0 100.0 VCE - Collector Emitter Voltage ( V ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature Figure 8. Collector Current vs. Collector Emitter Voltage 10000 ICEO- Collector Dark Current, with open Base ( nA ) VCEsat - Collector Emitter SaturationVoltage (V ) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1 10 I C - Collector Current ( mA ) 10% 20% CTR=50% V CE=20V I F=0 1000 100 10 1 0 96 11928 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient T emperature (C ) 100 96 11993 Figure 6. Collector Dark Current vs. Ambient Temperature Figure 9. Collector Emitter Saturation Voltage vs. Collector Current V CE=5V IC - Collector Current ( mA) CTR - CurrentTransfer Ratio ( % ) 100.00 1000 V CE=5V 10.00 100 1.00 10 0.10 0.01 0.1 96 11929 1.0 10.0 100.0 96 11994 1 0.1 1.0 10.0 100.0 I F - Forward Current ( mA ) I F - Forward Current ( mA ) Figure 7. Collector Current vs. Forward Current Figure 10. Current Transfer Ratio vs. Forward Current www.vishay.com 4 Document Number 83525 Rev. 1.4, 26-Oct-04 MCT6H / MCT62H Vishay Semiconductors Figure 11. Turn on / off Time vs. Collector Current ton / toff -Turn on / Turn off Time ( s ) 10 8 6 4 toff 2 0 0 Non saturated operation V S=5V RL=100 ton 1 96 11995 23456789 I C - Collector Current ( mA ) 10 Package Dimensions in mm 14784 Document Number 83525 Rev. 1.4, 26-Oct-04 www.vishay.com 5 MCT6H / MCT62H Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83525 Rev. 1.4, 26-Oct-04 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
Price & Availability of MCT6H04
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |